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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1646 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) *High DC Current Gain : hFE= 1000(Min) @IC= 1A *Low Collector Saturation Voltage APPLICATIONS *Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 100 100 6 2 3 1.5 25 V V .cn mi e V A ICP Collector Current-Peak Collector Power Dissipation @ Ta=25 A PC Collector Power Dissipation @ TC=25 TJ Junction Temperature W 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD1646 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; IB= 0 B 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50A; IE= 0 100 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 1mA B 1.5 V ICBO Collector Cutoff Current VCB= 100V; IE= 0 10 A IEBO Emitter Cutoff Current hFE DC Current Gain COB Collector Output Capacitance w w. w .cn mi cse is IC= 1A; VCE= 2V 1000 IE= 0; VCB= 10V; f= 1MHz VEB= 5V; IC= 0 3 mA 10000 25 pF isc Websitewww.iscsemi.cn 2 |
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